savantic semiconductor product specification silicon npn power transistors BU508DFI d escription with to-3pml package high voltage,high speed built-in damper diode applications for use in horizontal deflection circuits of colour tv receivers. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cp collector current (pulse) 15 a p tot total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.5 /w fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU508DFI characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 700 v v cesat collector-emitter saturation voltage i c =4.5a ;i b =2a 1.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =2a 1.3 v i ces collector cut-off current v ce =1500v , v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =5.0v; i c =0 300 ma h fe dc current gain i c =1a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =5v 7 mhz v f diode forward voltage i f =4a 2.0 v t s storage time 7 s t f fall time i c =4.5a ; v cc =140v i b =1.8a; l b =3mh l c =0.9mh 0.55 s
savantic semiconductor product specification 3 silicon npn power transistors BU508DFI package outline fig.2 outline dimensions
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